doi: 10.7763/IJAPM.2014.V4.295
Modeling of Electron Tunneling Current in a p-n Junction Based on Strained Armchair Graphene Nanoribbon
Rifky Syariati
,
Endi Suhendi
,
Fatimah A. Noor
,
,
- the Department of Physics, Institut Teknologi
Abstract
A theoretical model of electron tunneling current in a p-n junction made from strained armchair graphenenanoribbon (AGNR) was developed. The effect of strain to the energy dispersion relation of AGNR was formulated under the tight binding method. The energy bandgap of AGNR was then analytically determined. Furthermore, the electron transmittance was calculated by utilizing the Airy wavefunction-approach. Finally, the calculated transmittance was used to obtain the tunneling current by employing the Landauer formula. The effects of strain to the energy band gap, AGNR width, and tunneling current were studied thoroughly.
Keywords
- Graphene
- AGNR
- tight binding
- strain
- band gap
- p-n junction
- Airy wave function
- tunneling current
How to Cite
Rifky Syariati, Endi Suhendi, Fatimah A. Noor, Mikrajuddin Abdullah, and and Khairurrijal, "Modeling of Electron Tunneling Current in a p-n Junction Based on Strained Armchair Graphene Nanoribbon," International Journal of Applied Physics and Mathematics, vol. 4, no. 4, pp. 259-262, 2014. https://doi.org/ 10.7763/IJAPM.2014.V4.295
Copyright & License
Copyright © 2014 by the authors. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).