Volume 3 Number 5 (Sep. 2013)
Home > Archive > 2013 > Volume 3 Number 5 (Sep. 2013) >
IJAPM 2013 Vol.3(5): 364-369 ISSN: 2010-362X
DOI: 10.7763/IJAPM.2013.V3.237

The Theory of Von Klitzing’s Constant and Phases

Keshav N. Shrivastava

Abstract—The Hall resistivity is found to become a function of spin. For positive spin, one value is found but for negative sign in the spin, another value occurs. In this way, there is never only one value of the resistivity but there is doubling of values. The value of the von Klitzing’s constant is a special case of more general dependence of resistivity on the spin. We investigate the effect of Landau levels. For extreme quantum limit, n=0, the effective charge of the electron becomes (1/2)ge. The fractional charge arises for finite value of the angular momentum. There is a formation of spin clusters. As the field increases, there is a phase transition from spin ½ to spin 3/2 so that g value becomes 4 and various values of n in Landau levels, g(n+1/2), form plateaus in the Hall resistivity. For finite values of the orbital angular momenta, many fractional charges emerge. The fractional as well as the integral values of the charge are in full agreement with the experimental data. The generalized constant is h/[(1/2)ge]e which under special conditions becomes h/e2 which is the von Klitzing’s constant.

Index Terms—Von Klitzing’s constant, g values, charge square and Planck’s contant ratio, angular momentum.

Keshav N. Shrivastava is with the University of Hyderabad, Hyderabad 500046, India (e-mail: keshav1001@yahoo.com).

Cite: Keshav N. Shrivastava, "The Theory of Von Klitzing’s Constant and Phases," International Journal of Applied Physics and Mathematics vol. 3, no. 5, pp. 364-369, 2013.

General Information

ISSN: 2010-362X (Online)
Abbreviated Title: Int. J. Appl. Phys. Math.
Frequency: Quarterly
APC: 500USD
DOI: 10.17706/IJAPM
Editor-in-Chief: Prof. Haydar Akca 
Abstracting/ Indexing: INSPEC(IET), CNKI, Google Scholar, EBSCO, Chemical Abstracts Services (CAS), etc.
E-mail: ijapm@iap.org