Volume 3 Number 5 (Sep. 2013)
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IJAPM 2013 Vol.3(5): 341-344 ISSN: 2010-362X
DOI: 10.7763/IJAPM.2013.V3.233

Characterization of Proton Irradiation Effect in Semiconductor Material

Haider F. Abdul Amir and Fuei Pien Chee

Abstract—The different radiation environments either in space, high energy physics experiments, nuclear environment or fabrication process as well as for standard terrestrial operation possess an impact on the semiconductor devices. This makes that the devices based on III-V semiconductors are probable to be critical components of future electronic systems as the demand for greater robustness and susceptibility to well function in rigorous radiation environments continue to increase. In this paper, the penetration of proton, utilizing ion Hydrogen (H+) into Silicon (Si) materials is being simulated using the program simulation SRIM (stopping and range of ions in matter). By using the SRIM simulation program, the final 3D distribution of the ions and all kinetic phenomena associated with the ion's energy loss: target damage, sputtering, ionization, and phonon production can be calculated. From the findings, it is observed that the penetration of H+ ions into the target Si layer leads to production of lattice defects in the form of vacancies, defect clusters and dislocations. The simulation results also show that the level of degradation in the Si materials is highly depending on the projected range, the nuclear stopping and electronic stopping of H+ ions. There is no apparent difference in the radiation damage when the incident angle of H+ ions is varying.

Index Terms—Hydrogen, silicon, lattice defects.

The authors are with the School of Science and Technology, University of Malaysia Sabah, Kota Kinabalu, Malaysia (e-mail: haider@ums.edu.my; fpchee06@ieee.org).

Cite: Haider F. Abdul Amir and Fuei Pien Chee, "Characterization of Proton Irradiation Effect in Semiconductor Material," International Journal of Applied Physics and Mathematics vol. 3, no. 5, pp. 341-344, 2013.

General Information

ISSN: 2010-362X (Online)
Abbreviated Title: Int. J. Appl. Phys. Math.
Frequency: Quarterly
DOI: 10.17706/IJAPM
Editor-in-Chief: Prof. Haydar Akca 
Abstracting/ Indexing: INSPEC(IET), CNKI, Google Scholar, EBSCO, Chemical Abstracts Services (CAS), etc.
E-mail: ijapm@iap.org
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