doi: 10.7763/IJAPM.2013.V3.171
Photocurrent Enhancement of P-Cu<sub>2</sub>O Thin Film Achieved by Thermal Annealing
Yu-Kuei Hsu
,
- the National Dong Hwa University, Hualien, 97401, Taiwan.
Abstract
The effects of annealing on the photocurrent enhancement of <i>p</i>-Cu<sub>2</sub>O thin film were systematically investigated in this report. The thermal annealing process under the N<sub>2</sub> atmospheres obviously improved the crystallization of Cu<sub>2</sub>O and release the compressed stress resulting from deposition of the film according to the results of XRD and Raman measurements. Furthermore, IPCE measurement was utilized to evaluate the bandgap of 2.1 eV in Cu2O thin film. Significantly, the annealed Cu<sub>2</sub>O thin film exhibited the six times enhancement of photocurrent in comparison with as-grown sample.
Keywords
- Cu<sub>2</sub>O
- electrodeposition
- photoelectrochemical
How to Cite
Yu-Kuei Hsu and Hung-Hsun Lin, "Photocurrent Enhancement of P-Cu<sub>2</sub>O Thin Film Achieved by Thermal Annealing," International Journal of Applied Physics and Mathematics, vol. 3, no. 1, pp. 43-45, 2013. https://doi.org/ 10.7763/IJAPM.2013.V3.171
Copyright & License
Copyright © 2013 by the authors. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).