Abstract—The effects of annealing on the photocurrent enhancement of p-Cu₂O thin film were systematically investigated in this report. The thermal annealing process under the N₂ atmospheres obviously improved the crystallization of Cu₂O and release the compressed stress resulting from deposition of the film according to the results of XRD and Raman measurements. Furthermore, IPCE measurement was utilized to evaluate the bandgap of 2.1 eV in Cu2O thin film. Significantly, the annealed Cu₂O thin film exhibited the six times enhancement of photocurrent in comparison with as-grown sample.

Index Terms—Cu₂O, electrodeposition, photoelectrochemical.

The authors are with the National Dong Hwa University, Hualien, 97401, Taiwan. (e-mail: ykhsu@ mail.ndhu.edu.tw). (e-mail: ykhsu@ mail.ndhu.edu.tw).

Cite: Yu-Kuei Hsu and Hung-Hsun Lin, "Photocurrent Enhancement of P-Cu2O Thin Film Achieved by Thermal Annealing," International Journal of Applied Physics and Mathematics  vol. 3, no. 1, pp. 43-45, 2013.