Volume 3 Number 1 (Jan. 2013)
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IJAPM 2013 Vol.3(1): 43-45 ISSN:2010-362X
DOI: 10.7763/IJAPM.2013.V3.171

Photocurrent Enhancement of P-Cu2O Thin Film Achieved by Thermal Annealing

Yu-Kuei Hsu and Hung-Hsun Lin

Abstract—The effects of annealing on the photocurrent enhancement of p-Cu2O thin film were systematically investigated in this report. The thermal annealing process under the N2 atmospheres obviously improved the crystallization of Cu2O and release the compressed stress resulting from deposition of the film according to the results of XRD and Raman measurements. Furthermore, IPCE measurement was utilized to evaluate the bandgap of 2.1 eV in Cu2O thin film. Significantly, the annealed Cu2O thin film exhibited the six times enhancement of photocurrent in comparison with as-grown sample.

Index Terms—Cu2O, electrodeposition, photoelectrochemical.

The authors are with the National Dong Hwa University, Hualien, 97401, Taiwan. (e-mail: ykhsu@ mail.ndhu.edu.tw). (e-mail: ykhsu@ mail.ndhu.edu.tw).

Cite: Yu-Kuei Hsu and Hung-Hsun Lin, "Photocurrent Enhancement of P-Cu2O Thin Film Achieved by Thermal Annealing," International Journal of Applied Physics and Mathematics  vol. 3, no. 1, pp. 43-45, 2013.

General Information

ISSN: 2010-362X
Frequency: Bimonthly (2011-2014); Quarterly (Since 2015)
DOI: 10.17706/IJAPM
Editor-in-Chief: Prof. Haydar Akca
Abstracting/ Indexing: Index Copernicus, EI (INSPEC, IET), Chemical Abstracts Services (CAS), Electronic Journals Library, Engineering & Technology Digital Library, Nanowerk Database, Google Scholar and ProQuest
E-mail: ijapm@iap.org
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