doi: 10.7763/IJAPM.2012.V2.156
Influence of Physical Parameters on Microwave Noise Characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs
Robab Madadi
1
,
Rahim Faez
2
,
Behrouz Behtoee
3
- 1 the Department of Electrical Engineering, Islamic Azad University, Arak, Iran
- 2 the Department of Electrical Engineering, Sharif University of technology
- 3 the Department of Electrical Engineering, Islamic Azad University, Qazvin, Iran
Abstract
The noise characteristics of Al<sub>0.3</sub>Ga<sub>0.7</sub>N/Al<sub>0.05</sub>Ga<sub>0.95</sub>N/GaN CC-HEMT are calculated as a function of gate voltage as well as drain voltage. Also minimum Noise Figure (NF<sub>min</sub>) is calculated for different physical parameters. It is shown that the minimum noise figure decreases when the distance between source-gate or gate-drain decrease, or when the gate length decreases. Also the thickness of Al<sub>0.3</sub>Ga<sub>0.7</sub>N is changed. It is shown that the noise figure decreases when the barrier thickness increases.
Keywords
- AlGaN/GaN
- composite-channel (CC) HEMTs
- minimum noise figure (NF<sub>min</sub>)
How to Cite
Robab Madadi, Rahim Faez, and Behrouz Behtoee, "Influence of Physical Parameters on Microwave Noise Characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs," International Journal of Applied Physics and Mathematics, vol. 2, no. 6, pp. 442-445, 2012. https://doi.org/ 10.7763/IJAPM.2012.V2.156
Copyright & License
Copyright © 2012 by the authors. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).