Volume 2 Number 6 (Nov. 2012)
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IJAPM 2012 Vol.2(6): 442-445 ISSN:2010-362X
DOI: 10.7763/IJAPM.2012.V2.156

Influence of Physical Parameters on Microwave Noise Characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs

Robab Madadi, Rahim Faez, and Behrouz Behtoee

Abstract—The noise characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN CC-HEMT are calculated as a function of gate voltage as well as drain voltage. Also minimum Noise Figure (NFmin) is calculated for different physical parameters. It is shown that the minimum noise figure decreases when the distance between source-gate or gate-drain decrease, or when the gate length decreases. Also the thickness of Al0.3Ga0.7N is changed. It is shown that the noise figure decreases when the barrier thickness increases.

Index Terms—AlGaN/GaN, composite-channel (CC) HEMTs, minimum noise figure (NFmin)

R. Madadi is with the Department of Electrical Engineering, Islamic Azad University, Arak, Iran (e-mail: smadadi@ymail.com).
R. Faez is with the Department of Electrical Engineering, Sharif University of technology (e-mail: Faez@sharif.edu).
B. Behtoee is with the Department of Electrical Engineering, Islamic Azad University, Qazvin, Iran (e-mail: B.Behtoee@qiau.ac.ir).

 

Cite: Robab Madadi, Rahim Faez, and Behrouz Behtoee, "Influence of Physical Parameters on Microwave Noise Characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs," International Journal of Applied Physics and Mathematics  vol. 2, no. 6, pp. 442-445, 2012.

General Information

ISSN: 2010-362X (Online)
Abbreviated Title: Int. J. Appl. Phys. Math.
Frequency: Quarterly
DOI: 10.17706/IJAPM
Editor-in-Chief: Prof. Haydar Akca 
Abstracting/ Indexing: INSPEC(IET), CNKI, Google Scholar, EBSCO, Chemical Abstracts Services (CAS), etc.
E-mail: ijapm@iap.org
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