Volume 1 Number 2 (Sep. 2011)
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IJAPM 2011 Vol.1(2): 124-128 ISSN:2010-362X
DOI: 10.7763/IJAPM.2011.V1.24

Diagnostic of Capacitively Coupled Low Pressure Radio Frequency Plasma: An Approach through Electrical Discharge Characteristic

B. Bora, H. Bhuyan, M. Favre, E. Wyndham, and H. Chuaqui

Abstract—Low temperature radio frequency plasma is widely used in low temperature plasma processing medium for material processing in many fields including microelectronics, aerospace, and the biology. For proper utilization of the process, it is very much important to know the plasma parameters. In this paper a technique is reported to determine the plasma parameters from the electrical discharge characteristic of a capacitivly couple radio frequency argon plasma. The homogeneous discharge model is modified to make it applicable in low pressure by incorporating the plasma series resonance effect. The effect on the plasma resistance by the change in drift velocity of the electron with rf electric filed is also considered. The electron density and temperature is found to be well agreed with the Langmuir probe diagnostic result, which is in the range of 0.5x1010 to 4.5x1010 cm-3 and 1.4 to 1.6 ev for wide range of rf power.

Index Terms—Capacitive couple radio frequency plasma, discharge characteristic, homogeneous discharge model, plasma parameters, power balance.

Department of Physics, Pontificia Universidad Catolica de Chile, Santiago, Chile. (e-mail: bbora@ fis.puc.cl).

 

Cite: B. Bora, H. Bhuyan, M. Favre, E. Wyndham, and H. Chuaqui, "Diagnostic of Capacitively Coupled Low Pressure Radio Frequency Plasma: An Approach through Electrical Discharge Characteristic," International Journal of Applied Physics and Mathematics  vol. 1, no. 2, pp. 124-128, 2011.

General Information

ISSN: 2010-362X (Online)
Abbreviated Title: Int. J. Appl. Phys. Math.
Frequency: Quarterly
DOI: 10.17706/IJAPM
Editor-in-Chief: Prof. Haydar Akca 
Abstracting/ Indexing: INSPEC(IET), CNKI, Google Scholar, EBSCO, Chemical Abstracts Services (CAS), etc.
E-mail: ijapm@iap.org
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