Abstract—The article discusses the dynamic three-dimensional modeling compounds A3B5. The initial structure is taken compound GaAs. The resulting model is given for different distances from the central atom. There are the distances from one to six. The result is an uneven growth of the number of atoms grouped along the radius of coverage. For the other elements of the possibility of uniform methods increase the number of atoms, such as Ga. This article briefly describes the algorithms finding the orderly and the semi platonic and Archimedean figures and their complexes for the FCC and BCC structures, which contributes to the increased use of the computer modeling techniques in crystallography and SSP.

Index Terms—Semiconductors; ab initio calculations; crystal structure; Fermi surface.

Cite: K. Iskakova and R. Akhmaltdinov, "Modeling and Calculation of the Dynamic Three-dimensional A³B⁵ Models on the Example of GaAs," International Journal of Applied Physics and Mathematics  vol. 1, no. 2, pp. 112-117, 2011.