doi: 10.7763/IJAPM.2011.V1.5
Terahertz Wave Antireflection Filter Using Nanostructure Multilayers
- 1 the Department of Physics, Nanchang University, China.
- 2 the Institute of Industry Technology, China.
Abstract
Over the past decades, there have been significant advances in techniques to generate and detect terahertz (THZ) signals, but there have been comparatively few reports of structures that manipulate and control them. In this paper, based on the characteristic matrix method, hydrogenated amorphous silicon (a-Si[H]) and silicon oxide (SiO2) were chosen as coating materials, a nanostructure multilayers as broadband antireflection coating used at terahertz frequencies region was designed. Which has a residual reflectivity of less than 0.08 and average reflectivity about 0.06 throughout the 50–140 cm-1 region. But we found that the increasing of incident angle will large the average residual reflectivity and enhance the polarization-dependent deviation effect especially. Then we designed a depolarizing broadband antireflection by adopting a silicon-air multiilayer structure. It’s residual reflectivity was small and corredponding polarizion effect can also be neglected.
Keywords
- Nanostructure
- multilayers;
- broadband
- antireflection;
- terahertz
- frequencies
- region
How to Cite
Wang Wenliang and Rong Xiaohong, "Terahertz Wave Antireflection Filter Using Nanostructure Multilayers," International Journal of Applied Physics and Mathematics, vol. 1, no. 1, pp. 24-27, 2011. https://doi.org/ 10.7763/IJAPM.2011.V1.5
Copyright & License
Copyright © 2011 by the authors. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).