Volume 2 Number 3 (May 2012)
Home > Archive > 2012 > Volume 2 Number 3 (May 2012) >
IJAPM 2012 Vol.2(3): 208-211 ISSN:2010-362X
DOI: 10.7763/IJAPM.2012.V2.91

Crystal Growth and Dielectric Property of Na0.5K0.5NbO3 and Mn-Doped Na0.5K0.5NbO3 Single Crystal Grown by Flux Method

R. Saravanan, D. Rajesh, S. V. Rajasekaran, R. Perumal, M. Chitra, and R. Jayavel

Abstract—Lead free piezoelectric single crystals of (K0.5Na0.5)NbO3 and 0.5 wt%, 1.0 wt% and 1.5 wt% MnO2 doped (K0.5Na0.5)NbO3 (KNN) were grown by high-temperature solution method using K2CO3– Na2CO3 eutectic composition as flux with addition of small amounts of boron oxide for lowering the melting temperature. The effect of the manganese dopant on the dielectric properties, surface morphology and the domain structure were investigated. The MnO2-doped KNN crystals were found to exhibit higher dielectric permittivity when compared with pure KNN single crystal. Mn doping increases the dielectric constant and decreases the dielectric loss. A slight decrease in the orthorhombic to tetragonal phase transition temperature T(O-T) and Curie temperature TC has been observed in manganese-doped KNN single crystals. From SEM and AFM analysis, the domain size of KNN–Mn crystal was found to be of the order of 5–13 μm at room temperature which is smaller than that of the pure KNN crystal (20–30 μm).

Index Terms—Ferroelectric, defect, KNN, piezoelectric, single crystal etc.

R. Saravanan and M. Chitra are with the Crystal Growth Centre, Anna University, Chennai.
D. Rajesh is with the G.T. Sollar Cell, China. S. V. Rajasekaran is with the Govement Arts and Science College, Dharmapuri.
R. Perumal is with the Hanyang University, Seoul, South Korea.
R. Jayavel is with the Centre for Nanoscience and Technology, Anna University, Chennai (e-mail: rjvel@annauni.edu, Tel.: +91-44-2235 8328, fax: +91-44-2230 1656).

 

Cite: R. Saravanan, D. Rajesh, S. V. Rajasekaran, R. Perumal, M. Chitra, and R. Jayavel, "Crystal Growth and Dielectric Property of Na0.5K0.5NbO3 and Mn-Doped Na0.5K0.5NbO3 Single Crystal Grown by Flux Method," International Journal of Applied Physics and Mathematics  vol. 2, no. 3, pp.  208-211, 2012.

General Information

ISSN: 2010-362X
Frequency: Bimonthly (2011-2014); Quarterly (Since 2015)
DOI: 10.17706/IJAPM
Editor-in-Chief: Prof. Haydar Akca
Abstracting/ Indexing: Index Copernicus, EI (INSPEC, IET), Chemical Abstracts Services (CAS), Electronic Journals Library, Engineering & Technology Digital Library, Nanowerk Database, Google Scholar and ProQuest
E-mail: ijapm@iap.org
  • Mar 11, 2016 News!

    IJAPM Vol.5, No.3 has been indexed by EI (Inspec).   [Click]

  • Sep 28, 2017 News!

    Vol 7, No 4 has been published with online version     [Click]

  • Aug 10, 2017 News!

    The papers published in Vol 7, No 3 have all received dois from Crossref

  • Jul 21, 2017 News!

    Vol 7, No 3 has been published with online version     [Click]

  • Feb 22, 2017 News!

    The papers published in Vol.7, No.2 have all received dois from Crossref.

  • Read more>>