Volume 1 Number 2 (Sep. 2011)
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IJAPM 2011 Vol.1(2): 144-148 ISSN:2010-362X
DOI: 10.7763/IJAPM.2011.V1.28

Asymmetric Hysteresis Loops, Leakage Current and Capacitance Voltage Behaviors in Ferroelectric PZT Films Deposited on a Pt/Al2O3/SiO2/Si Substrate by MOCVD method with a vapor-deposited Gold Top Electrode

Masruroh and Masayuki Toda

Abstract—The polarization-voltage (P-V), leakage currents density (J-V) characteristics and the C-V characteristics were investigated on the ferroelectric PZT films deposited on Pt/Al2O3/SiO2/Si substrate with a vapor-deposited gold top electrode. The P-V hysteresis loops the J-V characteristics and the C-V characteristics were measured after performing a rapid thermal annealing (RTA) process. A ferroelectric test system (Precision LC Radiant Technology) was used to measure their electrical properties with a 90-nm PZT thickness and a capacitor area range from 7.10 x10-4 cm2. The measurements were taken by connecting a Pt bottom electrode to the drive of the precision LC and the Au top electrode to the drive of the precision LC. The P-V hysteresis and J-V characteristics of PZT samples showed the asymmetry for both measurements. The P-V hysteresis loops, J-V and C-V behavior were shifted in the positive direction when the drive was applied to the Pt electrode, while being negatively shifted in the converse case. The asymmetric behavior of the polarized state in the hysteresis loops due to the electrode configuration resulted from different work function between the Pt and Au electrodes, further influencing the leakage current behavior and the capacitance voltage.

Index Terms—PZT films, Pt bottom electrode, Au top electrode, different work function, asymmetries

Masruroh is with Physics Department, Faculty of Mathematics & Natural Science, Brawijaya University, Malang, Indonesia (e-mail:rafizen_02@yahoo.com).
Masayuki Toda is with the Department of Chemistry and Chemical Engineering, Yamagata University, Yonezawa-Yamagata 992-8510.WACOM R&D CO., LTD, 568 TANAKA, Fukaya shi, Saitama 369-1108, Japan.



Cite: Masruroh and Masayuki Toda, "Asymmetric Hysteresis Loops, Leakage Current and Capacitance Voltage Behaviors in Ferroelectric PZT Films Deposited on a Pt/Al2O3/SiO2/Si Substrate by MOCVD method with a vapor-deposited Gold Top Electrode," International Journal of Applied Physics and Mathematics  vol. 1, no. 2, pp. 144-148, 2011.

General Information

ISSN: 2010-362X (Online)
Abbreviated Title: Int. J. Appl. Phys. Math.
Frequency: Quarterly
DOI: 10.17706/IJAPM
Editor-in-Chief: Prof. Haydar Akca 
Abstracting/ Indexing: INSPEC(IET), CNKI, Google Scholar, EBSCO, Chemical Abstracts Services (CAS), etc.
E-mail: ijapm@iap.org
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